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Supervised by Ministry of Industry and Information Technology of The People's Republic of China Sponsored by Harbin Institute of Technology Editor-in-chief Yu Zhou ISSNISSN 1005-9113 CNCN 23-1378/T

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Related citation:DouJianHua,LiangYingChun,BaiQingShun,GongNa,DongShen.Atomic scale imaging of monocrystalline Si (001) surface by molecular dynamic simulation[J].Journal of Harbin Institute Of Technology(New Series),2009,16(6):879-883.DOI:10.11916/j.issn.1005-9113.2009.06.026.
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Atomic scale imaging of monocrystalline Si (001) surface by molecular dynamic simulation
Author NameAffiliation
DouJianHua Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001, China 
LiangYingChun Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001, China 
BaiQingShun Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001, China 
GongNa Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001, China 
DongShen Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001, China 
Abstract:
Non-contact atomic force microscopy(nc-AFM) atomic-scale imaging process of monocrystalline silicon surface using capped single-wall carbon nanotube tip is simulated by molecular dynamic method. The simulation results show that the nc-AFM imaging force mainly comes from the C-Si and C-C chemical covalent bonding forces, especially the former, the nonbonding Van der Waals force change is small during the range of stable imaging height. When the tip-surface distance is smaller than the stable imaging height, several neighboring carbon atoms at the tip apex are attracted, and some of them jump onto the sample surface. Finally the tip apex configuration is destroyed with the tip indenting further.
Key words:  molecular dynamic simulation  carbon nanotube  imaging  non-contact AFM
DOI:10.11916/j.issn.1005-9113.2009.06.026
Clc Number:TB302
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