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Supervised by Ministry of Industry and Information Technology of The People's Republic of China Sponsored by Harbin Institute of Technology Editor-in-chief Yu Zhou ISSNISSN 1005-9113 CNCN 23-1378/T

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Related citation:CAO Yi-jiang,XiaoFei,ZHANG Er-dong.A band-gap voltage reference for interface circuit of microsensor[J].Journal of Harbin Institute Of Technology(New Series),2010,17(4):497-500.DOI:10.11916/j.issn.1005-9113.2010.04.011.
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A band-gap voltage reference for interface circuit of microsensor
Author NameAffiliation
CAO Yi-jiang Dept. of Electronic Science and Technology,College of Applied Science,Harbin University of Science and Technology,Harbin 150080, China 
XiaoFei Dept. of Electronic Science and Technology,College of Applied Science,Harbin University of Science and Technology,Harbin 150080, China 
ZHANG Er-dong Dept. of Electronic Science and Technology,College of Applied Science,Harbin University of Science and Technology,Harbin 150080, China 
Abstract:
A high performance CMOS band-gap voltage reference circuit that can be used in interface integrated circuit of microsensor and compatible with 0. 6 μm ( double poly) mix process is proposed in this paper. The circuit can be employed in the range of 1. 8 - 8 V and carry out the first-order PTAT ( proportional to absolute temperature) temperature compensation. Through using a two-stage op-amp with a NMOS input pair as a negative feedback op-amp,the PSRR ( power supply rejection ratio) of the entire circuit is increased,and the temperature coefficient of reference voltage is decreased. Results from HSPICE simulation show that the PSRR is - 72. 76 dB in the condition of low-frequency,the temperature coefficient is 2. 4 × 10 -6 in the temperature range from - 10 ℃ to 90 ℃ and the power dissipation is only 14 μW when the supply voltage is 1. 8 V.
Key words:  microsensor  band-gap voltage reference  temperature coefficient  PSRR
DOI:10.11916/j.issn.1005-9113.2010.04.011
Clc Number:TM464
Fund:

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