| Author Name | Affiliation | | WU Xiao-wei | School of Municipal and Environmental Engineering,Harbin Institute of Technology,Harbin 150090,China
College of Geographical Sciences,Harbin Normal University,Harbin 150025,China | | FENG Yu-jie | School of Municipal and Environmental Engineering,Harbin Institute of Technology,Harbin 150090,China | | LIU Yan-kun | School of Municipal and Environmental Engineering,Harbin Institute of Technology,Harbin 150090,China |
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| Abstract: |
| According to the basic infrared stealth mechanism of low infrared emissivity powders,the ZAO powder materials were prepared by liquid coprecipitation method,and the starting materials were Zn( NO3) 6H2O and Al( NO3) 39H2O. The process parameters were obtained,and the relationship between technology parameters and infrared emissivity was investigated. The temperature of thermal treatment,crystal structure and surface micrograph of ZAO powder was analyzed by the help of TG-DTA,XRD and SEM. The infrared stealth performance of ZAO powder was studied by IR-2 emissivity spectroscopy. Results showed that the infrared emissivity was the lowest when pH was 8. 0,calcination temperature was 1100 ℃,calcination time was 2 h,and the Al2O3doping content was 3% ( mass percentage) . The crystal structure of doped ZAO powder was lead-zinc, and there exists distortion of crystal lattice in nanocrystalline ZnO. The average particle size was 10 μm. The lowest infrared emissivity reached to 0. 61 at between 8 μm and 14 μm. It means that the ZAO powders will be excellent infrared stealthy materials. |
| Key words: ZAO infrared stealth semiconductor material emissivity |
| DOI：10.11916/j.issn.1005-9113.2010.04.029 |
| Clc Number:TB383.3 |
| Fund: |
