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Supervised by Ministry of Industry and Information Technology of The People's Republic of China Sponsored by Harbin Institute of Technology Editor-in-chief Yu Zhou ISSNISSN 1005-9113 CNCN 23-1378/T

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Related citation:WANG Shou-guo,ZHANG Yan.Analytical model for capacitance-voltage characteristics of ion-implanted 4H silicon carbide Schottky barrier diodes[J].Journal of Harbin Institute Of Technology(New Series),2011,(6):44-47.DOI:10.11916/j.issn.1005-9113.2011.06.009.
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Analytical model for capacitance-voltage characteristics of ion-implanted 4H silicon carbide Schottky barrier diodes
Author NameAffiliation
WANG Shou-guo Dept.of Electronic and Information Engineering,Harbin Institute of Technology(Shenzhen Graduate School),Shenzhen 518055,China
School of Information Science and Technology,Northwest University,Xi’an 710127,China 
ZHANG Yan Dept.of Electronic and Information Engineering,Harbin Institute of Technology(Shenzhen Graduate School),Shenzhen 518055,China
 
Abstract:
In order to undertake theory analysis in the application area of switching,frequency and power devices,an analytical model for capacitance-voltage (C-V) characteristics of ion-implanted 4H silicon carbide (SiC) Schottky barrier diodes (SBDs) was investigated.This model was established by considering the effects of incomplete ionization of nitrogen in 4H-SiC,the Poole-Frenkel on the ionization energy,and the ion-implanted nitrogen donor profiles.The simulation process is discussed in detail for two multiple nitrogen ion-implanted 4H-SiC SBDs (three and four fold ion-implantations) designed and fabricated in the experiments using this model at different activation rates.An agreement between the modeled C-V curves and the measured results for two ion-implanted 4H-SiC SBDs fabricated is shown.This capacitance model has the potential to be used to simulate and design ion-implanted SiC devices concerned in the future.
Key words:  silicon carbide  capacitance  Schottky barrier diodes  ion implantation
DOI：10.11916/j.issn.1005-9113.2011.06.009
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