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Supervised by Ministry of Industry and Information Technology of The People's Republic of China Sponsored by Harbin Institute of Technology Editor-in-chief Yu Zhou ISSNISSN 1005-9113 CNCN 23-1378/T

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Related citation:QIAO Ying-jie,CUI Xin-fang,LIU Rui-liang,LIAN Xiao-zheng.Study on the characterization and technology of Cu thin-film temperature sensor fabricated on aluminum alloy[J].Journal of Harbin Institute Of Technology(New Series),2012,19(3):109-114.DOI:10.11916/j.issn.1005-9113.2012.03.019.
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Study on the characterization and technology of Cu thin-film temperature sensor fabricated on aluminum alloy
Author NameAffiliation
QIAO Ying-jie School of Material Science and Chemical Engineering. Harbin Engineering University, Harbin 150001, China 
CUI Xin-fang School of Material Science and Chemical Engineering. Harbin Engineering University, Harbin 150001, China 
LIU Rui-liang School of Material Science and Chemical Engineering. Harbin Engineering University, Harbin 150001, China 
LIAN Xiao-zheng School of Material Science and Chemical Engineering. Harbin Engineering University, Harbin 150001, China 
Abstract:
In the present study, anodic films on aluminium alloy was used as the dielectric layer for Cu thin-film temperature sensor, and then Cu film was deposited by unbalanced magnetron sputtering ion plating as the sensitive layer. Microstructure and surface morphologies of Cu film were investigated by optical microscope (OM), atomic force microscope (AFM) and scanning electron microscope (SEM). Electrical properties of Cu thin-film temperature sensor were tested by four-point probe technique and Digit Multimeter. The results showed that the surface roughness of anodic films can be reduced from Ra 58096 nm to Ra 16335 nm by proper polishing. Continual Cu stripes can be obtained both on polished anodic alumina film and smooth alumina wafer by etching after Cu film annealing. The resistivity of Cu films before and after 300 ℃ as well as 400 ℃ annealing are 1248 mΩ·cm, 548 mΩ·cm and 483 mΩ·cm, respectively. The resistances of Cu thin-film temperature sensor in 70 ℃ and 0 ℃ are 9465 Ω and 76115 Ω respectively. The temperature coefficient of resistivity (TCR) of the sensor is 3479 ×10-6/℃.
Key words:  thin-film temperature sensor  annealing  morphology  electrical properties
DOI:10.11916/j.issn.1005-9113.2012.03.019
Clc Number:TN371
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