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Supervised by Ministry of Industry and Information Technology of The People's Republic of China Sponsored by Harbin Institute of Technology Editor-in-chief Yu Zhou ISSNISSN 1005-9113 CNCN 23-1378/T

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Related citation:Qianneng Zhou,Yunsong Li,Jinzhao Lin,Hongjuan Li,Yu Pang,Wei Luo.High-PSRR High-Order Curvature-Compensated CMOS Bandgap Voltage Reference[J].Journal of Harbin Institute Of Technology(New Series),2015,22(5):116-124.DOI:10.11916/j.issn.1005-9113.2015.05.018.
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High-PSRR High-Order Curvature-Compensated CMOS Bandgap Voltage Reference
Author NameAffiliation
Qianneng Zhou Chongqing Key Laboratory of Photoelectronic Information Sensing and Transmitting Technology, Chongqing University of Posts and Telecommunications, Chongqing 400065, China 
Yunsong Li Chongqing Key Laboratory of Photoelectronic Information Sensing and Transmitting Technology, Chongqing University of Posts and Telecommunications, Chongqing 400065, China 
Jinzhao Lin Chongqing Key Laboratory of Photoelectronic Information Sensing and Transmitting Technology, Chongqing University of Posts and Telecommunications, Chongqing 400065, China 
Hongjuan Li College of Computer Science and Technology, ChongqingUniversity of Posts and Telecommunications, Chongqing 400065, China 
Yu Pang Chongqing Key Laboratory of Photoelectronic Information Sensing and Transmitting Technology, Chongqing University of Posts and Telecommunications, Chongqing 400065, China 
Wei Luo School of Electronic Information and Automation,Sichuan University of Science and Engineering, Zigong Sichuan 643000, China 
Abstract:
A high-PSRR high-order curvature-compensated CMOS bandgap voltage reference (BGR), which has the performances of high power supply rejection ratio (PSRR) and low temperature coefficient, is designed in SMIC 0.18 μm CMOS process. Compared to the conventional curvature-compensated BGR which adopted a piecewise-linear current, the temperature characterize of the proposed BGR is effectively improved by adopting two kinds of current including a piecewise-linear current and a current proportional 1.5 party to the absolute temperature T. By adopting a low dropout (LDO) regulator whose output voltage is the operating supply voltage of the proposed BGR core circuit instead of power supply voltage VDD, the proposed BGR with LDO regulator achieves a well PSRR performance than the BGR without LDO regulator. Simulation results show that the proposed BGR with LDO regulator achieves a temperature coefficient of 2.1 ×10-6/℃ with a 1.8 V power supply voltage and a line regulation of 4.9 μV/V at 27 ℃. The proposed BGR with LDO regulator at 10 Hz, 100 Hz, 1 kHz, 10 kHz and 100 kHz have the PSRR of -106.388, -106.388, -106.38, -105.93 and -88.67 dB respectively.
Key words:  bandgap voltage reference  low dropout regulator  temperature coefficient  power supply rejection ratio
DOI:10.11916/j.issn.1005-9113.2015.05.018
Clc Number:TN432
Fund:

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