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Supervised by Ministry of Industry and Information Technology of The People''s Republic of China Sponsored by Harbin Institute of Technology Editor-in-chief Yu Zhou ISSNISSN 1005-9113 CNCN 23-1378/T

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Initial Phase Properties and Anti-interference Capability of Memristor Models
Chi Zhang, Zhibin Luo, Xiangliang Jin
School of Physics and Electronic Science, Hunan Normal University, Changsha 410081, China
Abstract:
Memristor is a circuit device which describes the relationship between charge and magnetic flux. There have been three classical memristor models and many analyses about them. However, the anti-interference capability of each model has not been analyzed, and the merits and demerits of each memristor model are lack of analyses. Therefore, it is necessary to simulate and compare the memristor models. To get the feedback curves and analyze the anti-interference capability of memristor models, noise was added to each model in simulation software (matlab). The results show that the HP memristor model has the best anti-interference capability. Moreover, signals with different initial phases were input to each model and the quantity of the input signals was changed. The results show that the HP memristor model can best maintain its properties and the original precision among the three models.
Key words:  memristor  input signals  noise analyzing  precision
DOI:10.11916/j.issn.1005-9113.19022
Clc Number:O415.5
Fund:
Descriptions in Chinese:
  Memristor is a circuit device which describes the relationship between charge and magnetic flux. There have been three classical memristor models and many analyses about them. However, the anti-interference capability of each model has not been analyzed, and the merits and demerits of each memristor model are lack of analyses. Therefore, it is necessary to simulate and compare the memristor models. To get the feedback curves and analyze the anti-interference capability of memristor models, noise was added to each model in simulation software (matlab). The results show that the HP memristor model has the best anti-interference capability. Moreover, signals with different initial phases were input to each model and the quantity of the input signals was changed. The results show that the HP memristor model can best maintain its properties and the original precision among the three models.

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