| Related citation: | Dong Yan,Liang Yin,Xiaowei Liu,Wenning Jiang,Qiuye Lv.Design of Sixth-Order Lowpass Elliptic Switched-Capacitor Filter[J].Journal of Harbin Institute Of Technology(New Series),2016,23(6):47-53.DOI:10.11916/j.issn.1005-9113.2016.06.007. |
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| Author Name | Affiliation | | Dong Yan | MEMS Center, Harbin Institute of Technology, Harbin 150001, China | | Liang Yin | MEMS Center, Harbin Institute of Technology, Harbin 150001, China | | Xiaowei Liu | MEMS Center, Harbin Institute of Technology, Harbin 150001, China
Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin 150001, China | | Wenning Jiang | MEMS Center, Harbin Institute of Technology, Harbin 150001, China | | Qiuye Lv | MEMS Center, Harbin Institute of Technology, Harbin 150001, China |
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| Abstract: |
| In this paper the design and implementation of sixth-order lowpass elliptic switched-capacitor filter (SCF) for interface circuit of Micro-Electro-Mechanical System (MEMS) sensor are presented. This work aims to lower total harmonic distortion (THD) without deteriorating other performances. After system design in Simulink, the filter is realized in transistor level and finally fabricated in Central Semiconductor Manufacturing Corporation (CSMC) 0.5 μm metal-oxide-semiconductor (CMOS) technology. Typical measured results are: it operates with 25:1 clock-to-corner frequency ratio and a 10 kHz maximum corner frequency. The maximum passband ripple is about 0.49 dB and the minimum stopband rejection is 40 dB for the temperature from -20 ℃ to 80 ℃. For the 250 kHz clock frequency setting, given the 1 kHz, -8 dBVrms input signal, the measured worst case THD is -64 dB. The active area of the chip is 2.8 mm2 with 8 pads. The analog power dissipation is 10 mW from a 5 V power supply. |
| Key words: switched-capacitor lowpass elliptic filter biquad |
| DOI：10.11916/j.issn.1005-9113.2016.06.007 |
| Clc Number:TN492 |
| Fund: |
