High deposition characteristic of (E-MF) HiPIMS at high ionization rate
CSTR:
Author:
Affiliation:

(1.College of Engineering and Technology, Northeast Forestry University, Harbin 150040, China; 2.State Key Laboratory of Advanced Welding and Joining (Harbin Institute of Technology), Harbin 150001, China)

Clc Number:

TG174.444

Fund Project:

  • Article
  • |
  • Figures
  • |
  • Metrics
  • |
  • Reference
  • |
  • Related
  • |
  • Cited by
  • |
  • Materials
  • |
  • Comments
    Abstract:

    HJ1.1mm] Aiming to enable high power impulse magnetron sputtering (HiPIMS) technology to achieve high-speed deposition process while maintaining high ionization rate, the electric and magnetic fields synergistic effect was applied to improve the HiPIMS discharge and deposition characteristics. The substrate ion current density, optical emission spectrum, surface morphology and surface roughness, cross-section morphology, and deposition rate of vanadium films prepared by electro-magnetic fields synergistically enhancing HiPIMS ((E-MF) HiPIMS) were investigated, and the intrinsic physical mechanism of (E-MF) HiPIMS was analyzed. Results show that compared with HiPIMS, the peak of substrate ion current density of the plate workpiece in the discharge of vanadium target (E-MF) HiPIMS increased seven times, and the peak of substrate ion current density of the cylinder-like workpiece in the discharge of copper target (E-MF) HiPIMS increased 14 times. The intensity of Ar0 spectral lines, Ar+ spectral lines, V0 spectral lines, and V+ spectral lines of (E-MF) HiPIMS all enhanced significantly, and the ionization rate of Ar and V particles increased. The vanadium films prepared by (E-MF) HiPIMS consists of V (111) and V (211). The surface of the vanadium films prepared by (E-MF) HiPIMS was much smoother, and the surface roughness was reduced from 15.0 nm to 9.6 nm. The growing structure of the vanadium films was much denser, and the deposition rate was increased by about 30%. The deposition rate of copper films prepared by (E-MF) HiPIMS increased by about 50% under the cylinder-like workpiece rotation conditions. (E-MF) HiPIMS is a novel discharge mode with high ionization rate and high deposition rate, which can effectively avoid the technical defect of low deposition rate of conventional HiPIMS.

    Reference
    Related
    Cited by
Get Citation
Related Videos

Share
Article Metrics
  • Abstract:
  • PDF:
  • HTML:
  • Cited by:
History
  • Received:March 12,2020
  • Revised:
  • Adopted:
  • Online: January 29,2021
  • Published:
Article QR Code