| Author Name | Affiliation | | Wei Li | Beijing Key Laboratory for Magnetoelectric Materials and Devices BKLMMD, Beijing 100871, China
Beijing Innovation Center for Engineering Science and Advanced Technology BIC-ESAT, Peking University, Beijing 100871, China
Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China | | Yanglong Hou | Beijing Key Laboratory for Magnetoelectric Materials and Devices BKLMMD, Beijing 100871, China
Beijing Innovation Center for Engineering Science and Advanced Technology BIC-ESAT, Peking University, Beijing 100871, China
Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China |
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| Abstract: |
| Atomically thin MoS2 has drawn tremendous attention due to its great potential in a range of electronic devices such as photodetectors, field effect transistors (FET), and sensors. In the past few years, numerous methods including mechanical cleavage, liquid exfoliation, chemical vapor deposition (CVD) have been devoted to synthesizing two dimensional atomically thin MoS2. Among these methods, CVD is the most promising method for preparing large-size and highly crystalline MoS2 monolayers, exhibiting relatively good optical and electrical properties. Nevertheless, there are so many experiment parameters in CVD process that we should take into account, which makes it still a challenge for us to grow large-scale, single-crystalline MoS2 monolayer films suitable for practical applications. This review systematically summarized some synthetic strategies of MoS2 by CVD in recent years. We also discussed in detail how these vital factors such as substrates, carrier gases, Mo precursors, influenced the process of growth, which was expected to help us to controllably synthesize high-quality MoS2 and other kinds of transition metal dichalcogenides including WS2, VS2, WSe2 and so forth. |
| Key words: CVD MoS2 substrate carrier gas Mo precursor |
| DOI：10.11916/j.issn.1005-9113.18034 |
| Clc Number:TB34 |
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| Descriptions in Chinese: |
| 综述：化学气相沉积策略可控制备二维结构二硫化钼 李巍1，2，3，侯仰龙1，2，3 （1. 磁电功能材料与器件北京市重点实验室, 北京 100871; 2. 北京工程科学与新兴技术高精尖创新中心, 北京大学, 北京 100871; 3. 材料科学与工程系, 工学院 北京大学, 北京 100871) 摘要：原子级别厚度的二硫化钼因其在光电探测器、场效应晶体管以及传感器等电子器件领域具有很大的应用前景，而引起了人们的极大兴趣。近年来，包含机械剥离、液相剥离以及化学气相沉积等在内的许多方法都被用来制备原子级别厚度的二硫化钼。在这些方法中，化学气相沉积法是最有希望制备出大面积、高结晶度且具有优异光学和电学性能的合成方法。但是，在使用化学气相沉积法制备的过程中，需要考虑许多实验参数，这样就使得制备大面积的二硫化钼单晶成为一种挑战。本篇综述系统地总结了近年来使用化学气相沉积法制备二硫化钼的一些策略,还详细地讨论了一些关键因素,如基底、载气流量以及钼源的种类是如何影响生长过程的。这有助于我们可控地合成高质量的二硫化钼以及其它的一些过渡金属硫族化合物，如WS2, VS2, WSe2等。 关键词：化学气相沉积; 二硫化钼; 衬底; 载气; 钼前驱体 |
