| Related citation: | Bo Zhang,Zhibo Zhang,Xintao Guo,Ya’nan Yang,Ying Liu,Lei Yang,Jiaqi Zhu.Work Function Optimization Technology of Indium Tin Oxide Films[J].Journal of Harbin Institute Of Technology(New Series),2021,28(4):33-39.DOI:10.11916/j.issn.1005-9113.19081. |
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| Author Name | Affiliation | | Bo Zhang | Department of Materials Research, AVIC Manufacturing Technology Institute, Beijing 100024, China | | Zhibo Zhang | National Key Laboratory of Science and Technology on Advanced Composite in Special Environments, Harbin Institute of Technology, Harbin 150001, China | | Xintao Guo | Department of Materials Research, AVIC Manufacturing Technology Institute, Beijing 100024, China | | Ya’nan Yang | National Key Laboratory of Science and Technology on Advanced Composite in Special Environments, Harbin Institute of Technology, Harbin 150001, China | | Ying Liu | Department of Materials Research, AVIC Manufacturing Technology Institute, Beijing 100024, China | | Lei Yang | Center of Analysis and Measurement, Harbin Institute of Technology, Harbin 150001, China | | Jiaqi Zhu | National Key Laboratory of Science and Technology on Advanced Composite in Special Environments, Harbin Institute of Technology, Harbin 150001, China |
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| Abstract: |
| Indium tin oxide (In2O3∶Sn) film is one of the most potential materials in the field of semiconductor industry. However, untreated In2O3∶Sn film has a low work function which can result in a high energy barrier that hinders the passage of carriers through the interface, thus leading to poor overall performance of directly prepared devices. In this study, crystalline transparent conductive In2O3∶Sn films were prepared by plasma exposure assisted magnetron sputtering under room temperature. Based on multiple testing methods, it can be found that the low temperature crystallization characteristics of In2O3∶Sn film were enhanced and the work function was effectively improved after Ar+ plasma exposure. The increase of the work function of In2O3∶Sn film was due to the increment of Sn-O bond on the surface brought by the transition from low oxidation state Sn2+ to high oxidation state Sn4+ under the action of high exposure. |
| Key words: work function indium tin oxide low temperature crystallization plasma exposure |
| DOI：10.11916/j.issn.1005-9113.19081 |
| Clc Number:TQ337+.1 |
| Fund: |
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| Descriptions in Chinese: |
| 氧化铟锡薄膜的功函数优化技术
张博1，张智博2，郭新涛1，杨亚楠2，刘滢1，杨磊3，朱嘉琦2
（1. 中国航空制造技术研究所 材料研究部，北京100024；
2. 哈尔滨工业大学 特种环境复合材料技术国家级重点实验室，哈尔滨150080；
3. 哈尔滨工业大学 分析测试中心，哈尔滨150080）
创新点说明：1.通过等离子轰击技术辅助磁控溅射制备了高功函数的In2O3:Sn薄膜，实现了室温下透明导电薄膜的简易制备。 2.分析了In2O3:Sn薄膜功函数的变化机制。测试结果表明，In2O3:Sn薄膜功函数的增加是由于低氧化态Sn2+向高氧化态Sn4+转变，在高轰击能的作用下，表面结合Sn-O键增多提高了In2O3:Sn薄膜的功函数。 研究目的： In2O3:Sn薄膜作为一种透明导电材料，有着广阔的发展前景。但是未经处理的In2O3:Sn薄膜具有较低的功函数，在应用中受到了很大的限制。此外，In2O3:Sn功函数的变化机理还存在诸多争议。为了解决In2O3:Sn薄膜功函数低的问题，本文使用无老化效应的等离子体轰击辅助磁控溅射的方法，改进In2O3:Sn薄膜功函数，进一步阐明In2O3:Sn薄膜功函数的变化机制。 研究方法： 采用等离子体轰击辅助磁控溅射制备优先取向的In2O3:Sn薄膜来提升功函数，实现了室温下透明导电薄膜的简易制备。此外，我们利用X射线衍射(XRD)，X射线光电子能谱(XPS）和紫外荧光光谱法(UPS)等测试手段，通过改变Ar+等离子体轰击的沉积条件，阐明In2O3:Sn薄膜功函数的变化机制。 研究结果： 1） In2O3:Sn薄膜的XRD图显示，负偏压较低时（|Vp|<|-500 V|），In2O3:Sn薄膜的晶体结构为非晶态。当|-500 V|<|Vp|<|-700 V|时，带正电的氩离子受到负偏压的作用加速对薄膜表面进行撞击，动能转化成部分内能和表面原子运动的能量，从而加速了表面原子迁移率，使得In2O3:Sn表面晶化，显现(222)晶面。 2）In2O3:Sn薄膜XPS测试结果显示，随着负偏压的增大，ISn2+/ISn4+的比例从1.75逐渐降到0.35。与此同时，Sn4+峰的半高宽也发生了相应的变窄，从~1.2减少到~1.0左右。这也可以证明，等离子体轰击过程有助于低价的Sn2+向高价Sn4+的转变。 3）从不同负偏压下制备In2O3薄膜的UPS光谱可以看出，随着负偏压的增加，虽然In2O3:Sn薄膜氧空位的含量有所减少，但是并不会降低In2O3:Sn薄膜中载流子浓度。最大功函数WF=5.1 eV在(EF-EVBM)=2.69时产生。 结论：通过等离子轰击技术辅助磁控溅射制备了高功函数的In2O3:Sn薄膜。In2O3:Sn薄膜的功函数受到直流脉冲电压施加的Ar+等离子体轰击的显著影响。具有|Vp|=|-500V|的In2O3:Sn薄膜，增强的吸附原子迁移率消除了缺陷，改善了表面微晶的形成。低价态Sn2+的氧化态逐渐向高价态Sn4+的氧化态转变，引起In2O3:Sn表面的氧增多，提高了In2O3:Sn薄膜的功函数。 关键词：功函数，氧化铟锡，低温结晶，等离子体轰击纳米片；锂离子电池；比容量；液氮 |
