| Related citation: | Xinyue Liu,Yaling Huang,Yuyao Li,Jie Liu,Quanfang Chen.Fabrication of Graphene/Cu Composite by Chemical Vapor Deposition and Effects of Graphene Layers on Resultant Electrical Conductivity[J].Journal of Harbin Institute Of Technology(New Series),2024,31(1):16-25.DOI:10.11916/j.issn.1005-9113.2023003. |
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| Author Name | Affiliation | | Xinyue Liu | Department of Electrical Engineering, Southwest Jiaotong University, Chengdu 610031, China | | Yaling Huang | Department of Electrical Engineering, Southwest Jiaotong University, Chengdu 610031, China | | Yuyao Li | Department of Electrical Engineering, Southwest Jiaotong University, Chengdu 610031, China | | Jie Liu | Department of Electrical Engineering, Southwest Jiaotong University, Chengdu 610031, China | | Quanfang Chen | Department of Electrical Engineering, Southwest Jiaotong University, Chengdu 610031, China |
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| Abstract: |
| Graphene (Gr) has unique properties including high electrical conductivity; Thus, graphene/copper (Gr/Cu) composites have attracted increasing attention to replace traditional Cu for electrical applications. However, the problem of how to control graphene to form desired Gr/Cu composite is not well solved. This paper aims at exploring the best parameters for preparing graphene with different layers on Cu foil by chemical vapor deposition (CVD) method and studying the effects of different layers graphene on Gr/Cu composite's electrical conductivity. Graphene grown on single-sided and double-sided copper was prepared for Gr/Cu and Gr/Cu/Gr composites. The resultant electrical conductivity of Gr/Cu composites increased with decreasing graphene layers and increasing graphene volume fraction. The Gr/Cu/Gr composite with monolayer graphene owns volume fraction of less than 0.002%, producing the best electrical conductivity up to 59.8 ×106 S/m, equivalent to 104.5% IACS and 105.3% pure Cu foil. |
| Key words: chemical vapor deposition (CVD) Gr/Cu Gr/Cu/Gr graphene layers graphene volume fraction electrical conductivity |
| DOI：10.11916/j.issn.1005-9113.2023003 |
| Clc Number:TB333 |
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| Descriptions in Chinese: |
| 化学气相沉积制备石墨烯/Cu复合材料及石墨烯层对导电性能的影响 刘新月*, 黄亚玲, 李雨遥, 刘杰, 陈全芳 （西南交通大学 电气工程学院， 成都 610031） 摘要：石墨烯(Gr)已被证明具有包括高导电性等独特的性能；因此，石墨烯/铜(Gr/Cu)复合材料取代传统的铜应用在电气中的研究已引起越来越多的关注。然而，如何控制石墨烯形成理想的Gr/Cu复合材料的问题并没有很好地解决。本文旨在探索化学气相沉积(CVD)方法在铜箔上制备不同层数的石墨烯的最佳工艺参数，并研究不同层数的石墨烯对Gr/Cu复合材料电导率的影响。在单面和双面铜上生长石墨烯分别制备了Gr/Cu和Gr/Cu/Gr复合材料。随着石墨烯层数的减少和石墨烯体积分数的增加，Gr/Cu复合材料的电导率逐渐提高。单层石墨烯制备的Gr/Cu/Gr复合材料的体积分数小于0.002%，电导率最高可达59.8 ×10 6 S.m -1，相当于104.5% IACS和105.3%的纯铜箔。 关键词：化学气相沉积；Gr/Cu；Gr/Cu/Gr；石墨烯层数；石墨烯体积分数；导电性 |
