| 引用本文: | 卢翠英,成来飞,赵春年,张立同,徐永东.温度对化学气相沉积碳化硅涂层的影响[J].材料科学与工艺,2010,18(4):575-578,583.DOI:10.11951/j.issn.1005-0299.20100429. |
| LU Cui-ying,CHENG Lai-fei,ZHAO Chun-nian,ZHANG Li-tong,XU Yong-dong.Effect of temperature on the chemical vapor deposition of silicon carbide coatings[J].Materials Science and Technology,2010,18(4):575-578,583.DOI:10.11951/j.issn.1005-0299.20100429. |
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| 摘要: |
| 以三氯甲基硅烷和氢气为气源,研究了化学气相沉积碳化硅过程中,温度(850-1350℃)对沉积速率、反应物消耗效应、涂层形貌和相结构的影响.用磁悬浮天平在线实时称量基体质量变化进行动力学研究;采用扫描电镜和X射线衍射对样品做了表征.结果表明,沉积过程存在四个控制机理:a区(<1000℃)为表面反应动力学控制;b区(1000-1050℃)主要是HCl对沉积的抑制作用;c区(1050-1300℃)是表面化学反应和传质共同控制;d(>1300℃)为传质为限速步骤.由于不同的控制机制,导致所得涂层的形貌存在差异.含碳含硅中间物质浓度的减小、HCl增多和MTS的分解共同导致反应物消耗效应.涂层由热解碳和碳化硅两相组成,温度的升高使热解碳相减少,碳硅比接近1. |
| 关键词: 控制机理 碳化硅 化学气相沉积 |
| DOI：10.11951/j.issn.1005-0299.20100429 |
| 分类号:TG174.44 |
| 基金项目:国家自然科学基金项目(90405015) |
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| Effect of temperature on the chemical vapor deposition of silicon carbide coatings |
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LU Cui-ying1,2, CHENG Lai-fei1, ZHAO Chun-nian1, ZHANG Li-tong1, XU Yong-dong1
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1.National Key Laboratory of Thermostructure Composite Materials,Northwestern Polytechnical University,Xi’an 710072,China;2.Dept.of Chemical Industry and Chemistry,Yulin College,Yulin 719000,China
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| Abstract: |
| The effect of temperature(850-1350 ℃) on deposition rates,reactant depletions,surface morphologies and microstructures was investigated in chemical vapor deposition(CVD) of silicon carbide coatings from methyltrichlorosilane and hydrogen system at constant pressure and flow rates.The in-situ kinetics by magnetic suspension balance shows that there are four rate-limiting mechanisms:the surface reactionsin a region(<1000 ℃);the inhibition of HCl from deposition rate in b region(1000-1050 ℃);the combination of surface reactions and mass transfer in c region(1050-1300 ℃),and the reactant depletions in d region.The different rate-limiting mechanisms result in different coating morphologies.The combination of decreased concentrations of carbon-containing,silicon-containing species increased,HCl and decomposition of MTS causes the reactants depletion.The XRD results show that coatings consist of porlycrystalβ-SiC.The C/SiC is gradually close to 1 with the increasing temperature. |
| Key words: rate-limiting mechanisms silicon carbide CVD |
