| 引用本文: | 林伟,黄世震,陈文哲.新型SnO2/WO3双层薄膜NO2敏感性能研究[J].材料科学与工艺,2010,18(5):719-723,728.DOI:10.11951/j.issn.1005-0299.20100526. |
| LIN Wei,HUANG Shi-zhen,CHEN Wen-zhe.New SnO2/WO3 double layer thin film for NO2 sensor[J].Materials Science and Technology,2010,18(5):719-723,728.DOI:10.11951/j.issn.1005-0299.20100526. |
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| 摘要: |
| 采用射频磁控反应溅射锡(Sn)靶和钨(W)靶的方法制备了SnO2/WO3双层薄膜材料,通过XRD和XPS实验研究了双层薄膜的物相结构和组份,结果表明,SnO2/WO3双层薄膜经过热处理后形成了SnWO4化合物.在此基础之上,制作了相应的NO2气体敏感薄膜传感器,研究了双层薄膜传感器的制备工艺参数及工作条件对传感器性能的影响,研究了传感器的敏感特性,包括灵敏度、选择性、响应恢复等特性.结果表明,传感器对NO2气体有较好的敏感性,对其他干扰气体不敏感. |
| 关键词: SnO2/WO3 薄膜 磁控溅射 NO2 |
| DOI：10.11951/j.issn.1005-0299.20100526 |
| 分类号:TP212.2 |
| 基金项目:国家高技术发展计划资助项目(项目号2007AA03Z325);科技部863项目的支持(项目号:2007AA03Z325) |
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| New SnO2/WO3 double layer thin film for NO2 sensor |
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LIN Wei1,2,3, HUANG Shi-zhen1,2,3, CHEN Wen-zhe1
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1.College of Material Science And Engineering of FuZhou University,FuZhou 350002,China;2.College of Physics & Information Engineering of FuZhou University,FuZhou 350002,China;3.FuJian Key Laboratory of Microelectronics And Integrated Circuits,FuZhou 350002,China
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| Abstract: |
| The SnO2/WO3 double layer thin film was prepared by magnetron sputtering in which a tin(Sn) target and a tungsten(W) target were operated in radio frequency(RF) reactive mode.The crystallographic structure of the composite was investigated by X-ray diffraction(XRD) and X-ray photoelectron spectroscopy(XPS).Results reveals that the SnWO4 is formed by SnO2 and WO3.The sensor using the SnO2/WO3 double layer thin film was prepared,the preparation technology parameter,operated condition and the gas-sensing properties of the SnO2/WO3double layer thin film sensor,such as sensitivity,selectivity,response and recovery,were researched.The results indicate that the sensor has the good sensitivity to NO2 gas,and is insensitive to other disturbance gases. |
| Key words: SnO2/WO3 thin film magnetron sputtering NO2 |
