| 引用本文: | 张伟奇,孙纳纳,周大雨.衬底偏压对反应磁控共溅射 Y∶HfO2薄膜电学性能的影响[J].材料科学与工艺,2023,31(5):16-23.DOI:10.11951/j.issn.1005-0299.20220216. |
| ZHANG Weiqi,SUN Nana,ZHOU Dayu.Effect of substrate bias on electrical properties of Y∶HfO2 films deposited by reactive magnetron co-sputtering[J].Materials Science and Technology,2023,31(5):16-23.DOI:10.11951/j.issn.1005-0299.20220216. |
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| 衬底偏压对反应磁控共溅射 Y∶HfO2薄膜电学性能的影响 |
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张伟奇1,2, 孙纳纳1,2, 周大雨1,2
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(1.大连理工大学 材料科学与工程学院,辽宁 大连,116024;2.三束材料改性教育部重点实验室(大连理工大学),辽宁 大连,116024)
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| 摘要: |
| 作为微电子器件中最具发展前景的高介电薄膜材料,HfO2薄膜得到了学者们的广泛研究。低漏电流是HfO2薄膜使器件获得优良性能的前提,但易受晶粒尺寸、氧空位和粗糙度等因素影响。针对反应磁控溅射所得薄膜表面粗糙度高及漏电流密度大等缺点,本文在溅射过程中通过在衬底施加偏压的方法降低了HfO2薄膜的漏电流密度。结果表明:通过在衬底施加适当的偏压使得Y掺杂HfO2(Y∶HfO2)薄膜的漏电流密度降低到8×10-8 A/cm2。漏电流密度的变化与薄膜粗糙度和晶粒尺寸有关,而薄膜粗糙度和晶粒尺寸主要受衬底偏压的影响,但衬底偏压对薄膜物相的影响可以忽略。通过施加衬底偏压,利用反应磁控溅射方法制备了低漏电流和高k值Y∶HfO2薄膜,可为高性能器件的制备提供基础。 |
| 关键词: 氧化铪薄膜 漏电流密度 衬底偏压 反应磁控共溅射 粗糙度 |
| DOI：10.11951/j.issn.1005-0299.20220216 |
| 分类号:O484 |
| 文献标识码:A |
| 基金项目:国家自然科学基金资助项目(51972037)；大学生创新创业训练计划项目(20211014140484). |
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| Effect of substrate bias on electrical properties of Y∶HfO2 films deposited by reactive magnetron co-sputtering |
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ZHANG Weiqi1,2, SUN Nana1,2, ZHOU Dayu1,2
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(1.School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China; 2.Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China)
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| Abstract: |
| HfO2 thin films have been widely studied as the most promising materials for microelectronic devices. Low leakage current density of films is a prerequisite for good performance of devices, which is easily affected by grain size, oxygen vacancy, and film roughness. In view of the defects of films deposited by reactive magnetron sputtering, such as high roughness and leakage current density, substrate bias was applied to reduce leakage current density of HfO2 films during sputtering. Results show that the leakage current density of Y-doped HfO2 (Y∶HfO2) film was reduced to 8×10-8 A/cm2 through loading an appropriate bias voltage on the substrate. The variation of leakage current density was related to film roughness and grain size, while the film roughness and grain size were mainly affected by substrate bias voltage. Phase of HfO2 film had no change under different bias voltages. By applying substrate bias, Y∶HfO2 thin films with low leakage current density and high k values were prepared by reactive magnetron sputtering, which can provide basis for preparing high-performance devices. |
| Key words: HfO2 film leakage current density substrate bias reactive magnetron co-sputtering film roughness |
