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| Abstract: |
| Memristor is a circuit device which describes the relationship between charge and magnetic flux. There have been three classical memristor models and many analyses about them. However, the anti-interference capability of each model has not been analyzed, and the merits and demerits of each memristor model are lack of analyses. Therefore, it is necessary to simulate and compare the memristor models. To get the feedback curves and analyze the anti-interference capability of memristor models, noise was added to each model in simulation software (matlab). The results show that the HP memristor model has the best anti-interference capability. Moreover, signals with different initial phases were input to each model and the quantity of the input signals was changed. The results show that the HP memristor model can best maintain its properties and the original precision among the three models. |
| Key words: memristor input signals noise analyzing precision |
| DOI：10.11916/j.issn.1005-9113.19022 |
| Clc Number:O415.5 |
| Fund: |
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| Descriptions in Chinese: |
| 忆阻器模型的初相特征与抗干扰性能 张驰，罗志彬，金湘亮 （湖南师范大学 物理与电子科学学院，长沙 410081） 摘要：忆阻器是用来描述电流与磁通量之间关系的一种电子器件。现已有三种较经典的忆阻器理想模型以及相关的一些分析。但是对每一种模型的抗干扰性能与每种模型的优缺点仍缺少相应的对比分析，故有必要去仿真并对比各种模型。本文在matlab仿真软件中向各忆阻器模型加入噪声信号，以得到相应的特性曲线，从而分析各模型的抗干扰性能。仿真结果表明，HP模型展现了最佳的抗干扰性能。此外，当改变输入信号初相时，只有HP模型可以保持其忆阻特征；当改变输入信号数量时，只有HP模型可以保持其原有的精确度。 关键词：忆阻器；输入信号；噪声分析；精确度 |
