| 引用本文: | 吕江维,冯玉杰,彭鸿雁,陈玉强.直流热阴极CVD金刚石薄膜生长特性研究[J].材料科学与工艺,2010,18(3):317-321.DOI:10.11951/j.issn.1005-0299.20100305. |
| LU Jiang-wei,FENG Yu-jie,PENG Hong-yan,CHEN Yu-qiang.Growth characteristic of diamond films prepared by hot cathode DC chemical vapor deposition[J].Materials Science and Technology,2010,18(3):317-321.DOI:10.11951/j.issn.1005-0299.20100305. |
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| 摘要: |
| 为了获得高质量的金刚石薄膜,采用直流热阴极化学气相沉积系统分别在不同基片温度和不同碳源气体含量条件下生长金刚石薄膜,利用Raman光谱、SEM和XRD检测方法研究了基片温度和碳源气体含量对金刚石薄膜生长特性的影响.结果表明,金刚石薄膜与基片Mo之间有Mo2C的过渡层存在;1000℃的温度能够促进金刚石晶体的生长,抑制其他碳杂质的形成,CH4体积分数为2%适于快速生长高纯度的金刚石薄膜. |
| 关键词: 金刚石 直流热阴极 化学气相沉积 |
| DOI：10.11951/j.issn.1005-0299.20100305 |
| 分类号:TB383.2 |
| 基金项目:国家自然科学基金重点资助项目(50638020);城市水资源与水环境国家重点实验室开放研究基金资助项目(QA200805) |
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| Growth characteristic of diamond films prepared by hot cathode DC chemical vapor deposition |
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LU Jiang-wei1, FENG Yu-jie1, PENG Hong-yan2, CHEN Yu-qiang2
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1.State Key Laboratory of Urban Water Resource and Environment,Harbin Institute of Technology,Harbin 150090,China;2.The Physics Dept.,Mudanjiang Teachers College,Mudanjiang 157012,China
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| Abstract: |
| In order to acquire diamond films with high quality,hot cathode DC chemical vapor deposition system was used to prepare diamond films at various substrate temperatures of 700,850 and 1000 ℃ and various carbon source volume fractions of 1%,2%,2.5%,3% and 5% in gas phase,respectively.The influence of substrate temperatures and carbon source volume fractions on the growth characteristic of diamond films was investigated by Raman spectroscopy,scanning electron microscopy(SEM) and X-ray diffraction(XRD).The results show that a Mo2C inter-layer exists between Mo substrate and diamond film.The enhancement of diamond crystal growth and the inhibition of other carbon phase are found at 1000 ℃ and CH4 volume fraction of 2% is favorable for the growth of high quality diamond film at high growing rate. |
| Key words: diamond hot cathode DC chemical vapor deposition(CVD) |
