| 引用本文: | 申玉芳,彭怀玉,肖志刚,邹正光,张志军.Eu2+掺杂硅基氮氧化物荧光粉的制备与发光特性[J].材料科学与工艺,2015,23(5):48-51.DOI:10.11951/j.issn.1005-0299.20150509. |
| SHEN Yufang,PENG Huaiyu,XIAO Zhigang,ZOU Zhengguang,ZHANG Zhijun.Photoluminescence and photo-physical properties of Eu2+ doped nitride phosphors for LED[J].Materials Science and Technology,2015,23(5):48-51.DOI:10.11951/j.issn.1005-0299.20150509. |
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| Eu2+掺杂硅基氮氧化物荧光粉的制备与发光特性 |
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申玉芳1,2,彭怀玉1,肖志刚1,邹正光1,张志军3
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(1.有色金属及材料加工新技术教育部重点实验室(桂林理工大学), 桂林 541004;2.广西矿冶与环境科学实验中心, 桂林 541004;3.中国科学院 上海硅酸盐研究所, 中国科学院透明光功能无机材料重点实验室,上海 200050)
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| 摘要: |
| 为获得接近太阳光的自然发光效果,制备了Eu2+掺杂的硅基氮化物系列荧光粉,并对其发光特性及原理进行研究.采用碳热还原氮化法制备了Eu2+掺杂SrSiO3-Sr2Si5N8-SrSi2O2N2红色荧光粉.利用X射线衍射仪(XRD)、荧光分光光度计、MS-CASTEP对产物物相、发光光谱、电子结构进行了测试分析.结果发现:通过调节煅烧工艺参数,可同时获得2种主要物相或者单一物相的荧光粉；所制备的荧光粉,能够在350~400 nm范围内被UVLED很好地激发,根据主晶相的不同,产物的发射光谱可以在400~700 nm波段内调控.采用第一性原理分析了发射峰位于650 nm附近橙红色主晶相Sr2Si5N8Eu2+的电子结构和光物理性能,发现该物相为直接带隙半导体材料,Eu2+的4f轨道对费米面电子峰起主要作用.Eu2+掺杂SrSiO3-Sr2Si5N8-SrSi2O2N2是优良的、颜色可调控的红色荧光粉材料. |
| 关键词: 荧光粉 光致发光 荧光光谱 电子结构 |
| DOI：10.11951/j.issn.1005-0299.20150509 |
| 分类号:O482.31 |
| 基金项目:广西自然科学基金(2011GXNSFA018019)；广西教育厅资助项目(201012MS095)；有色金属及材料加工新技术教育部重点实验室开放基金(12KF-11). |
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| Photoluminescence and photo-physical properties of Eu2+ doped nitride phosphors for LED |
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SHEN Yufang1,2, PENG Huaiyu1, XIAO Zhigang1, ZOU Zhengguang1,2, ZHANG Zhijun3
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(1.Key Laboratory of New Processing Technology for Nonferrous Metals and Materials (Guilin University of Technology), Ministry of Education, Guilin 541004, China; 2.Guangxi Mining and Metallurgy and Environmental Science Laboratory Center, Guilin 541004, China; 3.Key Laboratory of Transparent Opto-Functional Inorganic Materials of Chinese Academy of Sciences, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai 200050, China)
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| Abstract: |
| The structural versatility and environment friendly characters of nitride phosphors make it possible to attain all the emission colors from blue to red and are good candidate for warm white LEDs. Eu2+ doped SrSiO3-SrSi2O2N2-Sr2Si5N8 phosphors were prepared by carbothermol reduction and nitridation (CRN) method. Phase composition in the final product was confirmed by X-ray diffractometer(XRD).Fluorospectro photometer was used to measure the photoluminescence (PL) spectrum and the results showed, the phosphors can be well activated in 350~400 nm under UVLED, with two emission peaks can be tailored from 400~700 nm according to the processing process, which are proved to be good red phosphors for LEDs. First principles calculations were conducted using MS(CESPTAP) to study the Sr2Si5N8Eu2+ crystal structure, and electronic structures and photoluminescence physical properties. It was found that the as-prepared materials is a direct-gap semiconductor, in which the emission peaks near fermi level are contributed by Eu2+ 4forbitals. |
| Key words: phosphors photoluminescence photoluminescence (PL) spectrum electronic structures |
