| 引用本文: | 高双,曾飞,宋成,潘峰.阳离子迁移型阻变存储材料与器件研究进展[J].材料科学与工艺,2016,24(4):1-9.DOI:10.11951/j.issn.1005-0299.20160401. |
| GAO Shuang,ZENG Fei,SONG Cheng,PAN Feng.Development of materials and devices for cation-migration-based resistive random access memory[J].Materials Science and Technology,2016,24(4):1-9.DOI:10.11951/j.issn.1005-0299.20160401. |
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| 阳离子迁移型阻变存储材料与器件研究进展 |
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高双1,2,曾飞1,2,宋成1,2,潘峰1,2
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(1.先进材料教育部重点实验室(清华大学),北京 100084; 2.清华大学 材料学院,北京 100084)
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| 摘要: |
| 硅基闪存是当前半导体市场的主流非易失性存储器，但其小型化日益接近物理极限.阳离子迁移型阻变存储器是下一代高速、高密度和低功耗非易失性存储器的有力竞争者之一，近些年受到科学界和工业界的广泛关注.本文从材料、阻变机理和器件性能3个方面综述了阳离子迁移型阻变存储器的研究进展，其中材料部分包括电极材料和存储介质，阻变机理部分包括金属导电细丝的存在、生长模式和生长动力学，而器件性能部分包括开关比、擦写速度、擦写功耗、循环耐受性、数据保持特性以及器件小型化潜力.最后，对本领域的未来研究重点进行了展望.
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| 关键词: 阻变存储器 阳离子迁移 氧化还原反应 金属导电细丝 非易失性存储器 |
| DOI：10.11951/j.issn.1005-0299.20160401 |
| 分类号:TP333.8 |
| 文献标识码:A |
| 基金项目:国家高技术研究发展计划资助项目(2014AA032901)；国家自然科学基金重点项目(51231004). |
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| Development of materials and devices for cation-migration-based resistive random access memory |
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GAO Shuang1,2, ZENG Fei1,2, SONG Cheng1,2, PAN Feng1,2
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(1.Key Laboratory of Advanced Materials (MOE)(Tsinghua University), Beijing 100084, China; 2.School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China)
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| Abstract: |
| Silicon-based Flash memory is currently the mainstream nonvolatile memory in semiconductor market,but its miniaturization will reach physical limit in the near future. As one promising candidate for next-generation high-speed,high-density,and low-power nonvolatile memory,cation-migration-based resistive random access memory (RRAM) has aroused much attention from academic and industrial communities in recent years. This review article provides a comprehensive summary of the recent progress in cation-migration-based RRAM in terms of materials,switching mechanism,and device performance. The materials involved are grouped into electrode materials and storage media. The switching mechanism section includes the existence,growth modes,and growth kinetics of metal filaments. For the device performance section,ON/OFF ratio,write/erase time,write/erase energy,endurance,retention,and the miniaturization of cation-migration-based RRAM is successively summarized in detail. At last,the focuses of further research concerning cation-migration-based RRAM are suggested.
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| Key words: resistive random access memory cation migration redox reaction metal filament nonvolatile memory |
