| 引用本文: | 张明,郭治平,吴长树,刘翔.热循环退火对InAs/Si(211)薄膜结构和电学性能的影响[J].材料科学与工艺,2017,25(5):20-24.DOI:10.11951/j.issn.1005-0299.20160427. |
| ZHANG Ming,GUO Zhiping,WU Changshu,LIU Xiang.Effect of thermal cycle annealing on the microstructure and properties of InAs/Si(211) films[J].Materials Science and Technology,2017,25(5):20-24.DOI:10.11951/j.issn.1005-0299.20160427. |
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| 摘要: |
| InAs作为Ⅲ-Ⅴ族化合物半导体材料，可以应用于磁阻和霍尔元器件、量子点激光器元件、太阳能电池和红外探测器元件等方面，具有广泛的研究和应用前景.本文以Si(211) 为衬底，采用热壁外延(hot wall epitaxy, HWE)技术制备了InAs薄膜，研究热循环退火(thermal cycle annealing, TCA)次数对InAs/Si(211) 薄膜结构及电学性能的影响.热壁外延制备InAs薄膜的衬底温度为400 ℃，生长时间为4 h，不同的热循环退火次数为2、4、6、8、10. X射线衍射(XRD)测试表明：利用HWE技术在Si(211) 衬底表面成功制备了闪锌矿结构的InAs薄膜，且沿(111) 取向择优生长；TCA能够明显增强Si(211) 衬底表面生长的InAs薄膜的择优取向.扫描电子显微镜(SEM)及原子力显微镜(AFM)测试分析表明：随着TCA次数增加到6次，InAs/Si(211) 薄膜表面由于晶粒细化作用变得均匀平整，表面粗糙度从69.63 nm降低到56.43 nm，此时霍尔迁移率达到2.67×103 cm2/(V·s)；过多的退火次数(≥8次)又会使薄膜表面的晶粒过大、缺陷增多，导致薄膜性能下降.
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| 关键词: InAs薄膜 Si(211)衬底 热循环退火 微观结构 电学性能 |
| DOI：10.11951/j.issn.1005-0299.20160427 |
| 分类号:TB321 |
| 文献标识码:A |
| 基金项目:国家自然科学基金资助项目(61367008). |
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| Effect of thermal cycle annealing on the microstructure and properties of InAs/Si(211) films |
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ZHANG Ming1, GUO Zhiping1, WU Changshu2, LIU Xiang1
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(1.Faculty of Material Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China; 2. Kunming Institute of Physics, Kunming 650223, China)
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| Abstract: |
| As a kind of Ⅲ-Ⅴ group compound semiconductor material, InAs can be applied to magnetic resistance and Hall devices, quantum dot laser devices, solar cells and infrared detector devices, etc, and show wide prospects for research and applications. High preferred orientation InAs films were prepared on (211) tilted single crystalline Si substrate by Hot Wall Epitaxy (HWE) technique. The effect of thermal cycle annealing (TCA) on the microstructure and electric properties of InAs films has been investigated in details. InAs films were prepared by hot wall epitaxy at substrate temperature of 400 ℃, deposition time of 4 h and different annealing cycles of 2, 4, 6, 8, or 10. The X-ray diffraction (XRD) results indicated that the zinc-blende structure of InAs films with highly preferred to (111)-direction was deposited on Si(211) substrate by HWE. Thepreferred orientation of InAs films on Si(211) substrates can be enhanced obviously by TCA treatment. Scanning electron microscopy and atomic force microscopy (AFM) observations showed that the as-deposited films are homogeneous and smooth with tincreasing the annealing cycles from 0 to 6. The AFM studies showed that surface roughness of InAs films are reduced from 69.63 nm to 56.43 nm with cycle annealing. Hall mobility of InAs/Si(211) film reached a value of 2.67×103 cm2/(V·s). However, the number of dislocations and the size of grain increase with an increase in the annealing cycles, leading to a reduced performance of the film.
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| Key words: InAs films Si(211) substrate thermal cycle annealing microstructure electrical properties |
