| 引用本文: | 翟文杰,杨德重.立方碳化硅CMP过程中机械作用分子动力学仿真[J].材料科学与工艺,2018,26(3):10-15.DOI:10.11951/j.issn.1005-0299.20170188. |
| ZHAI Wenjie,YANG Dezhong.Molecular dynamics simulations of the mechanical process in the chemical mechanical polishing of cubic silicon carbide[J].Materials Science and Technology,2018,26(3):10-15.DOI:10.11951/j.issn.1005-0299.20170188. |
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| 摘要: |
| 为了更好地理解立方碳化硅在化学机械抛光(CMP)过程中原子层面的材料去除机理，利用分子动力学(MD)方法建立了金刚石磨粒刻划碳化硅的原子模型，仿真研究了金刚石磨粒半径、刻划深度和刻划速度对碳化硅表面形貌、晶体结构、摩擦力和原子去除率的影响规律，并与无定型二氧化硅氧化膜的机械刻划作用的仿真结果进行了对比分析.结果发现：碳化硅在机械刻划过程中局部会出现非晶态变化；刻划深度增大会导致切削力和切削温度增大，原子去除率也随之增加；刻划速度的改变会影响温度和原子去除率，而对切削力几乎无影响；磨粒半径的增加会导致切削力和温度的增加，在压入深度相同的情况下对原子去除率影响不大；碳化硅表面生成的二氧化硅膜能大幅度降低切削力，但由于其结构的影响，机械刻划作用仅使氧化膜产生明显的致密化，而不产生磨屑.
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| 关键词: 分子动力学 化学机械抛光 碳化硅 刻划 无定型二氧化硅 |
| DOI：10.11951/j.issn.1005-0299.20170188 |
| 分类号:TG356.28 |
| 文献标识码:A |
| 基金项目:国家自然科学基金资助项目(51475119). |
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| Molecular dynamics simulations of the mechanical process in the chemical mechanical polishing of cubic silicon carbide |
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ZHAI Wenjie,YANG Dezhong
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(School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China)
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| Abstract: |
| For better understanding of the material removal mechanisms at the atomic level in chemical mechanical polishing (CMP) process of cubic silicon carbide (SiC), molecular dynamics (MD) method was employed to establish an atomic model of SiC scratching by diamond abrasive. The effects of abrasive size, scratching depths and scratching velocities on the scratched surface profile, crystal structure, friction force and the atomic removal rate of silicon carbide were investigated by MD simulations. The simulation results are comparatively analyzed with those of the mechanical scratching of the amorphous silicon dioxide film formed during CMP. Simulation results indicate that amorphization will occur in the local area of processed surface during the mechanical scratching process. A higher cutting depth results in a larger cutting force, a higher cutting temperature, and a higher atomic removal rate. The change in the scratching velocity will affect the temperature and the atomic removal rate but exerts little role on the cutting force. The increase in abrasive radius leads to higher cutting force and temperature but has no obvious effect on the atomic removal rate at the same cutting depth. Silica film formed on SiC surface can greatly decrease the cutting force. Because of its pore structure, mechanical scratching only results in significant densification of the silica film without the formation of wear chips.
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| Key words: molecular dynamics CMP silicon carbide scratching amorphous silica |
