| 引用本文: | 张琼,赵培,吴慰,戴武斌,GOTO Takashi,徐源来.前驱体温度对激光化学气相沉积YBa2Cu3O 7δ超导薄膜结构及性能的影响[J].材料科学与工艺,2020,28(2):9-17.DOI:10.11951/j.issn.1005-0299.20180365. |
| ZHANG Qiong,ZHAO Pei,WU Wei,DAI Wubin,GOTO Takashi,XU Yuanlai.Effect of precursor temperature on structure and properties of YBa2Cu3O7-δ superconducting thin films prepared by laser chemical vapor deposition[J].Materials Science and Technology,2020,28(2):9-17.DOI:10.11951/j.issn.1005-0299.20180365. |
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| 前驱体温度对激光化学气相沉积YBa2Cu3O 7δ超导薄膜结构及性能的影响 |
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张琼1, 赵培1, 吴慰1, 戴武斌1, GOTO Takashi2, 徐源来3
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(1.等离子体化学与新材料湖北省重点实验室(武汉工程大学) ,武汉 430205; 2.东北大学金属材料研究所,沈阳 160001; 3.绿色化工过程省部共建教育部重点实验室(武汉工程大学), 武汉 430205)
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| 摘要: |
| 采用激光化学气相沉积法在Al2O3基底上以49 μm·h-1的沉积速率高速制备了c-轴取向的YBa2Cu3O7-δ薄膜,其中,激光功率为133 W,沉积温度1103 K,腔体压强800 Pa。研究了前驱体蒸发温度及薄膜退火温度对薄膜电学性能的影响。研究表明,Ba、Cu、Y前驱体加热温度分别为603、478、459 K时制备的薄膜在经813 K高温热处理12 h后,临界温度可达83 K。 |
| 关键词: 激光化学气相沉积 YBa2Cu3O7-δ薄膜 高速沉积 |
| DOI：10.11951/j.issn.1005-0299.20180365 |
| 分类号:TM26 |
| 文献标识码:A |
| 基金项目:国家自然科学基金(51972241). |
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| Effect of precursor temperature on structure and properties of YBa2Cu3O7-δ superconducting thin films prepared by laser chemical vapor deposition |
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ZHANG Qiong1,ZHAO Pei1,WU Wei1,DAI Wubin1,GOTO Takashi2,XU Yuanlai3
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(1.Hubei Key Laboratory of Plasma Chemistry and Advanced Materials(Wuhan Institute of Technology), Wuhan 430205, China; 2.Institute for Materials Research, Northeastern University, Senyang 160001, China; 3.Key Laboratory for Green Chemical Process of Ministry of Education(Wuhan Institute of Technology), Wuhan 430205, China)
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| Abstract: |
| c-axis-oriented YBa2Cu3O7-δ film was prepared on Al2O3 substrates at a deposition rate of 49 μm·h-1 by laser chemical vapor deposition at a laser power of 133 W, with corresponding deposition temperature of 1103 K and total pressure of 800 Pa. Effects of the evaporation temperature and annealing temperature on the electrical properties of the film were investigated. The YBa2Cu3O7-δ film showed a critical temperature of 83 K after heat-treated at 813 K for 12 h when the evaporation temperature of Ba, Cu, and Y precursors were 603 K, 478 K, and 459 K, respectively. |
| Key words: laser chemical vapor deposition YBa2Cu3O7-δ film high deposition rate |
