| 引用本文: | 刘伟,平云霞,杨俊,张波.微波退火条件下镍和锗锡合金反应的形貌研究[J].材料科学与工艺,2021,29(6):49-53.DOI:10.11951/j.issn.1005-0299.20200345. |
| LIU Wei,PING Yunxia,YANG Jun,ZHANG Bo.Morphology research of Ni-GeSn reaction under microwave annealing[J].Materials Science and Technology,2021,29(6):49-53.DOI:10.11951/j.issn.1005-0299.20200345. |
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| 摘要: |
| 为了研究高质量镍锗锡薄膜的制备方法,在不同微波退火温度下进行了锗锡合金与镍的固相反应。借助四探针方块电阻测试、原子力显微镜、透射电子显微镜、能量色散X射线光谱等表征手段,分析了在微波退火条件下100～350 ℃所生成镍锗锡化物样品的形貌。研究结果表明:镍锗锡化物的表层电阻、表面粗糙度及薄膜质量与微波退火温度紧密相关,在250 ℃退火条件下得到了连续平整的镍锗锡薄膜,锡偏析在镍锗锡/锗锡的界面；在350 ℃退火条件下,薄膜的连续性遭到破坏,表面粗糙度变大,锡偏析在样品的表面和镍锗锡/锗锡的界面。与常规快速热退火方式相比,本文采用的微波退火方式,可在相对更低的温度得到高质量的镍锗锡薄膜,降低了镍与锗锡衬底反应所需的热预算。 |
| 关键词: 表面形貌 微波退火 锗锡合金 锡偏析 镍 |
| DOI：10.11951/j.issn.1005-0299.20200345 |
| 分类号:TN304.0 |
| 文献标识码:A |
| 基金项目:国家自然科学基金资助项目(61604094). |
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| Morphology research of Ni-GeSn reaction under microwave annealing |
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LIU Wei1,2, PING Yunxia1, YANG Jun1,2, ZHANG Bo2
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(1.School of Mathematics, Mathematics and Statistics, Shanghai University of Engineering Science, Shanghai 201600, China; 2.State Key Laboratory of Functional Materials for Informatics(Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences),Shanghai 200050, China)
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| Abstract: |
| In order to study the morphology of NiGeSn under microwave annealing conditions, Ni-GeSn reaction was studied under different microwave annealing (MWA) temperatures. The NiGeSn morphologies were characterized by the four-point probe method, atomic force microscopy (AFM), the cross-section transmission electron microscopy (XTEM) and energy dispersive X-ray spectrometer (EDX) techniques under MWA temperature of 100~350 ℃. It is shown that the sheet resistance, RMS values and crystal quality of NiGeSn film had a close relation with the annealing temperatures. The smooth and uniform NiGeSn film cloud be formed at 250 ℃ and the Sn atoms segregated at the NiGeSn/GeSn interface. At 350 ℃, the continuous NiGeSn film was destroyed and the NiGeSn surface became very rough. Sn atoms segregated on the NiGeSn surface and the NiGeSn/GeSn interface. Compared with rapid thermal annealing (RTA), microwave annealing reduces the thermal budget and can form a flat NiGeSn film at a relative low temperature. |
| Key words: surface morphology microwave annealing germanium tin alloy Tin segregation Nickel |
