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主管单位 中华人民共和国
工业和信息化部
主办单位 中国材料研究学会
哈尔滨工业大学
主编 苑世剑 国际刊号ISSN 1005-0299 国内刊号CN 23-1345/TB

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引用本文:史淑艳,马博,薛梦瑶,申浩阳,贾里哈斯,孙纳纳,周大雨.反应磁控溅射法制备厚度均匀分布超高导电性TiN电极薄膜[J].材料科学与工艺,2022,30(3):1-6.DOI:10.11951/j.issn.1005-0299.20210228.
SHI Shuyan,MA Bo,XUE Mengyao,SHEN Haoyang,JIALi Hasi,SUN Nana,ZHOU Dayu.Preparation of TiN electrode films of uniform thickness with ultra-high conductivity by reactive magnetron sputtering[J].Materials Science and Technology,2022,30(3):1-6.DOI:10.11951/j.issn.1005-0299.20210228.
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反应磁控溅射法制备厚度均匀分布超高导电性TiN电极薄膜
史淑艳1,马博1,薛梦瑶1,申浩阳1,贾里哈斯1,孙纳纳1,2,周大雨1,2
(1.大连理工大学 材料科学与工程学院,辽宁 大连 116024; 2.三束材料改性教育部重点实验室(大连理工大学),辽宁 大连 116024)
摘要:
微电子器件的迅速发展对TiN电极薄膜电阻率、表面粗糙度以及厚度均匀性均提出了更高的要求。本文采用半导体工艺兼容的反应磁控溅射技术在单晶硅上制备TiN薄膜。通过XRR、GIXRD、四探针测试仪和AFM等表征手段系统研究了衬底偏压、工作气压和溅射电源对薄膜晶体结构和电阻率的影响规律。结果表明,当采用直流电源进行溅射镀膜时,在-200 V的衬底偏压和0.3 Pa的工作气压下,得到了沿(200)晶面择优生长、表面粗糙度为0.7 nm、电阻率为38.7 μΩ·cm 的TiN薄膜。在该工艺条件下,分别采用直流和射频电源在4英寸单晶硅衬底上制备TiN薄膜。最终采用射频电源可获得高导电性、原子级平滑且厚度均匀分布的薄膜。分析发现:在使用射频电源的放电溅射过程中,高频交变电场使放电空间的电子在电极之间震荡,产生比直流放电更有效的碰撞电离,因此射频磁控溅射比直流磁控溅射沉积的薄膜更致密。
关键词:  微电子器件  反应磁控溅射  TiN薄膜  电阻率  晶体结构
DOI:10.11951/j.issn.1005-0299.20210228
分类号:TB34
文献标识码:A
基金项目:国家自然科学基金资助项目(51972037);国家级大学生创新创业训练计划支持项目(20211014140484).
Preparation of TiN electrode films of uniform thickness with ultra-high conductivity by reactive magnetron sputtering
SHI Shuyan1, MA Bo1, XUE Mengyao1, SHEN Haoyang1, JIALi Hasi1, SUN Nana1,2, ZHOU Dayu1,2
(1.School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China; 2.Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China)
Abstract:
The rapid development of microelectronic devices brings about higher requirements for the resistivity, surface roughness, and thickness uniformity of TiN electrode films. In this study, TiN films were prepared on monocrystalline silicon by reactive magnetron sputtering. The effects of substrate bias, working pressure, and sputtering power on the crystal structure and resistivity of the films were systematically studied by using XRR, GIXRD, four-point probe, AFM, and so on. Results show that when the substrate bias and working pressure were -200 V and 0.3 Pa respectively, TiN films were obtained with (220) preferred orientation, surface roughness of 0.7 nm, and resistivity of 38.7 μΩ·cm by using DC sputtering. Under the same process condition, TiN thin films were prepared on 4-inch monocrystalline silicon substrate by DC and RF power respectively. Finally, films with high conductivity, atomic smoothness, and uniform thickness distribution could be obtained by using RF power supply. When RF power was used for sputtering discharge, the electrons in the discharge space vibrated between the electrodes under the action of high-frequency electric field, resulting in more effective collision ionization than DC discharge. Thus, films deposited by RF magnetron sputtering were denser than those by DC magnetron sputtering.
Key words:  microelectronic devices  reactive magnetron sputtering  TiN thin film  resistivity  crystal structure

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