| 引用本文: | 陈飞彪,许亚文,张谋翔,谢贤清.掺(Ga,Si)银铝浆对n型TOPCon太阳能电池电性能的影响[J].材料科学与工艺,2023,31(5):76-83.DOI:10.11951/j.issn.1005-0299.20230004. |
| CHEN Feibiao,XU Yawen,ZHANG Mouxiang,XIE Xianqing.Effect of Ga, Si doped silver aluminum paste on the electrical performance of n-type TOPCon solar cells[J].Materials Science and Technology,2023,31(5):76-83.DOI:10.11951/j.issn.1005-0299.20230004. |
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| 掺(Ga,Si)银铝浆对n型TOPCon太阳能电池电性能的影响 |
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陈飞彪1,许亚文2,张谋翔2,谢贤清3
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(1.江西师范大学 化学化工学院, 南昌 330027; 2.江西佳银科技有限公司, 南昌 330100; 3.江西师范大 学国家单糖化学合成工程技术研究中心,南昌 330027)
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| 摘要: |
| 银铝浆是新一代太阳能电池(n型TOPCon)的关键材料,但其金属化后在Si发射极表面形成很大且很深的“银铝尖钉”,尖钉易击穿p-n结造成短路,成为限制其应用的瓶颈。引入Si、Ga元素对银铝浆进行优化,分别制备了掺Si和掺Ga,Si的银铝浆,研究其对金属化区域暗态饱和电流密度J0.metal、欧姆接触电阻Rc的影响机制。结果表明:掺入少量Si后,金属化区域未见明显“银铝尖钉”,说明掺Si后抑制了在浆料金属化时出现“银铝尖钉”的现象,对p-n结损伤较小,J0.metal下降,开路电压Voc上升,但是Rc增大。再掺入Ga组分后“银铝尖钉”明显变浅,数量变多,Rc下降,弥补了掺Si银铝浆欧姆接触差的弊端,有较高的电池转换效率；用扩散浓度测试仪(ECV)对发射极表层进行元素浓度分析,发现Ga分布于表层0~50 nm处,有利于改善欧姆接触。研究了Ga、Si的掺入量对银铝浆电性能的影响,电池转换效率最高达到24.68%,太阳能电池效率提升0.55%。 |
| 关键词: 银铝浆 欧姆接触 暗态饱和电流密度 金属化 转换效率 |
| DOI：10.11951/j.issn.1005-0299.20230004 |
| 分类号:TQ174 |
| 文献标识码:A |
| 基金项目:江西省重大技术需求揭榜挂帅项目(20213AAE02013)；江西省教育厅科研项目(170217). |
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| Effect of Ga, Si doped silver aluminum paste on the electrical performance of n-type TOPCon solar cells |
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CHEN Feibiao1, XU Yawen2, ZHANG Mouxiang2, XIE Xianqing3
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(1.College of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang 330027,China; 2.Jiangxi Jiayin Technology Co., Ltd., Nanchang 330100, China; 3.National Research Center for Monosaccharide Chemical Synthesis Engineering Technology, Jiangxi Normal University, Nanchang 330027, China)
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| Abstract: |
| Silver aluminum paste is the key material of the new generation solar cell (n-type TOPCon), but after metallization, large and deep "silver aluminum spike" is formed on the surface of the Si emitter. The spike is easy to break through the p-n junction, causing short-circuit and constituting the bottleneck of application. In this study, Si and Ga elements were introduced to optimize the silver aluminum paste, and the silver aluminum paste doped with Si and Ga, Si were prepared respectively, and the mechanism of its influence on the dark state saturated current density J0.metal and ohmic contact resistance Rc in the metallization region was investigated. The results show that the doped Si inhibited the phenomenon of "silver aluminum spike" in the process of slurry metallization. The damage to p-n junction is small, with J0.metal decreasing, Voc rising, but the Rc increasing. After re-doping Ga component, the "silver aluminum spikes" become significantly shallower, the number becomes more, and Rc decreases, making up for the shortcomings of Si doped ohmic contact, and the cell exhibiting a higher conversion efficiency. Using ECV to analyze the element concentration of emitter surface, it is found that Ga is distributed at 0~50 nm of the surface layer, conducive to the improvement of ohmic contact. The influence of the amount of Ga and Si on the electrical properties of silver aluminum paste was explored, with the highest conversion efficiency of the cell reaching 24.68% and the efficiency of solar cells increasing by 0.55%. |
| Key words: silver aluminum paste Ohmic contact dark saturation current density metallization conversion efficiency |
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