| 引用本文: | 王爱华,牛义红,刘宇,陈铁军,李立亚.掺杂硅硅栅晶圆片快速热处理工艺中的温度分布[J].哈尔滨工业大学学报,2014,46(3):124.DOI:10.11918/j.issn.0367-6234.2014.03.022 |
| WANG Aihua,NIU Yihong,LIU Yu,CHEN Tiejun,LI Liya.Temperature distribution of wafer with a doped silicon gate array during Rapid Thermal Process[J].Journal of Harbin Institute of Technology,2014,46(3):124.DOI:10.11918/j.issn.0367-6234.2014.03.022 |
|
| 摘要: |
| 为了提高晶圆片温度分布的均匀性、改善加热元件性能,采用传导与辐射耦合传热模型,对快速热处理工艺中晶圆片内传热过程进行了数值模拟,研究了3种掺杂硅硅栅宽度(lG=0,0,60 μm)条件下,硅栅宽度与图案周期之比(lG／lP=0.5,0.0,0.25)变化对晶圆片温度分布的影响．结果表明:在相同掺杂硅硅栅宽度条件下,随着硅栅排列密度的增加,晶圆片总的温度水平下降,晶圆片表面温度温差变小,温度均匀性提高；在相同硅栅排列密度条件下,随着硅栅宽度的增加,晶圆片温度水平不断提高,而晶圆片表面温度温差几乎没有变化．这是因为晶圆片表面图案结构变化改变了表面吸收特性,调整了对入射辐射能量的吸收和分配,影响了晶圆片温度水平和温度均匀性． |
| 关键词: 图案晶圆片 快速热处理工艺 热辐射 温度分布 热传输特性 |
| DOI：10.11918/j.issn.0367-6234.2014.03.022 |
| 分类号: |
| 基金项目:中央高校基本科研业务费专项资金资助项目(N110204015);中国博士后科学基金面上资助项目(2012M510075). |
|
| Temperature distribution of wafer with a doped silicon gate array during Rapid Thermal Process |
|
WANG Aihua1, NIU Yihong1, LIU Yu1, CHEN Tiejun1, LI Liya2
|
|
(1. School of Materials and Metallurgy, Northeastern University, 110819 Shenyang, China; 2. College of Power Engineering, Chongqing University, 400030 Chongqing, China)
|
| Abstract: |
| To improve the temperature uniformity of the wafer and better the device performance, a combined conduction and radiation heat transfer model was used to simulate the heat transfer within wafer during Rapid Thermal Process, and the effects of the ratio of gate width to the pattern period (lG／lP=0.5,0.0,0.25) on the temperature distribution were investigated, under three fixed doped silicon gate widths (lT=0,0, 60μm). The results show that, under the same doped silicon gate width, the temperature level of wafer decreases, the temperature difference reduces and the temperature uniformity of the wafer surface increases with the increase of the pattern arrangement density. Under the same doped silicon gate arrangement density, the temperature level enhances but the temperature uniformity changes little with the increase of the doped silicon gate width. This is because the wafer pattern structure changes the surface absorptance, adjusts the absorbing and distributing level of incident radiation energy, and transforms the temperature level and uniformity. |
| Key words: patterned wafer Rapid Thermal Process heat radiation temperature distribution heat transport properties |
