| 引用本文: | 李春伟,田修波,姜雪松,徐淑艳.高离化率电-磁场协同增强HiPIMS高速沉积特性[J].哈尔滨工业大学学报,2021,53(2):84.DOI:10.11918/202003040 |
| LI Chunwei,TIAN Xiubo,JIANG Xuesong,XU Shuyan.High deposition characteristic of (E-MF) HiPIMS at high ionization rate[J].Journal of Harbin Institute of Technology,2021,53(2):84.DOI:10.11918/202003040 |
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| 摘要: |
| 为了使高功率脉冲磁控溅射（HiPIMS）技术在保持高离化率的条件下实现HiPIMS高速沉积过程,采用电场与磁场双外场协同作用改善HiPIMS放电与沉积特性.研究了电-磁场协同增强HiPIMS（（E-MF）HiPIMS）和常规HiPIMS制备钒膜时的基体离子电流密度、发射光谱、钒膜表面形貌及表面粗糙度、截面形貌及沉积速率等,并探讨了（E-MF）HiPIMS模式的放电机理.研究表明:与HiPIMS相比,钒靶（E-MF）HiPIMS放电时的平板工件基体离子电流密度峰值增加了6倍,铜靶（E-MF）HiPIMS放电时的筒状工件基体离子电流密度峰值增加了13倍.（E-MF）HiPIMS放电时的Ar0谱线、Ar+谱线、V0谱线和V+谱线强度均显著增强,氩和钒的粒子离化率增加.（E-MF）HiPIMS制备的钒膜由V（111）和V（211）组成.（E-MF）HiPIMS制备的钒膜表面更加光滑平整且表面粗糙度由15.0 nm减小为9.6 nm；钒膜生长结构更加致密且沉积速率增加了约30%,而筒状工件转动条件下（E-MF）HiPIMS制备的铜膜的沉积速率增加了约50%.（E-MF）HiPIMS是一种高离化率高沉积速率的新型放电模式,该方法可有效规避常规HiPIMS较低沉积速率的技术缺陷. |
| 关键词: 高功率脉冲磁控溅射 钒膜 离化率 沉积速率 基体离子电流密度 |
| DOI：10.11918/202003040 |
| 分类号:TG174.444 |
| 文献标识码:A |
| 基金项目:中央高校基本科研业务费专项资金(2572018BL09)； 黑龙江省自然科学基金(LH2019E001) |
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| High deposition characteristic of (E-MF) HiPIMS at high ionization rate |
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LI Chunwei1,2,TIAN Xiubo2,JIANG Xuesong1,XU Shuyan1
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(1.College of Engineering and Technology, Northeast Forestry University, Harbin 150040, China; 2.State Key Laboratory of Advanced Welding and Joining (Harbin Institute of Technology), Harbin 150001, China)
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| Abstract: |
| HJ1.1mm] Aiming to enable high power impulse magnetron sputtering (HiPIMS) technology to achieve high-speed deposition process while maintaining high ionization rate, the electric and magnetic fields synergistic effect was applied to improve the HiPIMS discharge and deposition characteristics. The substrate ion current density, optical emission spectrum, surface morphology and surface roughness, cross-section morphology, and deposition rate of vanadium films prepared by electro-magnetic fields synergistically enhancing HiPIMS ((E-MF) HiPIMS) were investigated, and the intrinsic physical mechanism of (E-MF) HiPIMS was analyzed. Results show that compared with HiPIMS, the peak of substrate ion current density of the plate workpiece in the discharge of vanadium target (E-MF) HiPIMS increased seven times, and the peak of substrate ion current density of the cylinder-like workpiece in the discharge of copper target (E-MF) HiPIMS increased 14 times. The intensity of Ar0 spectral lines, Ar+ spectral lines, V0 spectral lines, and V+ spectral lines of (E-MF) HiPIMS all enhanced significantly, and the ionization rate of Ar and V particles increased. The vanadium films prepared by (E-MF) HiPIMS consists of V (111) and V (211). The surface of the vanadium films prepared by (E-MF) HiPIMS was much smoother, and the surface roughness was reduced from 15.0 nm to 9.6 nm. The growing structure of the vanadium films was much denser, and the deposition rate was increased by about 30%. The deposition rate of copper films prepared by (E-MF) HiPIMS increased by about 50% under the cylinder-like workpiece rotation conditions. (E-MF) HiPIMS is a novel discharge mode with high ionization rate and high deposition rate, which can effectively avoid the technical defect of low deposition rate of conventional HiPIMS. |
| Key words: high power impulse magnetron sputtering vanadium films ionization rate deposition rate substrate ion current density |
