| 引用本文: | 金晨,陈伟,王志宇,郁发新.X波段GaN高效率连续B类功率放大器芯片设计[J].哈尔滨工业大学学报,2021,53(6):77.DOI:10.11918/201909124 |
| JIN Chen,CHEN Wei,WANG Zhiyu,YU Faxin.Design of X-band GaN high-efficiency continuous class B power amplifier[J].Journal of Harbin Institute of Technology,2021,53(6):77.DOI:10.11918/201909124 |
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| 摘要: |
| 为有效地提升功率放大器的工作带宽和效率,基于0.25 μm GaN HEMT工艺,利用末级管芯输入、输出二次谐波调谐技术,设计了一款X波段GaN高效率连续B类功率放大器微波单片集成电路.末级管芯输出二次谐波调谐技术将晶体管的输出电容并入LC并联调谐电路中,简化了电路结构,并且优化并联LC调谐电路,将宽工作频带内各频点二次谐波负载阻抗与基波负载阻抗实现逐点对应,有效匹配支持宽高效率带宽的连续B类工作模式,并进一步结合二次谐波源阻抗牵引技术,采用输入二次谐波调谐技术,在末级晶体管输入端插入串联LC调谐电路.通过优化串联LC调谐电路,将工作频带内的二次谐波源阻抗点均移入各频点的高效率区域,实现功率放大器宽工作频带内输出效率的整体提升.实测结果表明,该功率放大器芯片在8.0~10.5 GHz工作频带内,饱和输出功率增益为40.8~42.2 dBm,饱和输出效率可达51%~59%,功率增益为19.8~21.2 dB,小信号增益为23.6~25.6 dB,输入回波损耗小于-10 dB.芯片尺寸面积为3.2 mm×2.4 mm.本研究提出的电路结构为提高功率放大器芯片的输出效率和带宽提供了一种可行的思路. |
| 关键词: 功率放大器 输入二次谐波调谐 高效率 连续B类 GaN HEMT |
| DOI：10.11918/201909124 |
| 分类号:TN722.75 |
| 文献标识码:A |
| 基金项目:国家自然科学基金(61604128)；中央高校基本科研业务费专项资助(2017QN81002) |
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| Design of X-band GaN high-efficiency continuous class B power amplifier |
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JIN Chen,CHEN Wei,WANG Zhiyu,YU Faxin
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(School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, China)
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| Abstract: |
| To effectively improve the operation bandwidth and efficiency of power amplifiers, an X-band high-efficiency continuous class B power amplifier was proposed based on 0.25-μm GaN high electron mobility transistor (HEMT) process. The power amplifier adopted the output second harmonic tuned method and utilized the output capacitance of the transistor to design a parallel LC harmonic tuned network, which simplified the circuit structure and optimized the parallel LC harmonic tune network. The second harmonic load impedance and fundamental load impedance were matched accordingly in wideband frequency, satisfying the requirements of continuous class B mode with high efficiency. Furthermore, combined with the second harmonic source-pull method, the power amplifier employed the input second harmonic tuned method and inputted a series LC harmonic tuned network to the output transistor. With the optimization of the series LC harmonic tuned network, the second harmonic source impedance was moved into the high-efficiency regions of the transistor, which achieved the overall improvement of the output efficiency of the power amplifier in the operation bandwidth. Results show that the proposed power amplifier chip was in the bandwidth of 8.0-10.5 GHz with a saturated output power gain of 40.8-42.2 dBm, a saturated output efficiency of 51%-59%, and a power gain of 19.8-21.2 dB. The small signal gain and input return loss of the power amplifier were 23.6-25.6 dB and below-10 dB respectively. The size of the proposed chip was 3.2 mm×2.4 mm. The circuit structure proposed in this paper provides a feasible method to improve the operation bandwidth and efficiency of microwave monolithic integrated circuit (MMIC) power amplifiers. |
| Key words: power amplifier input second harmonic tuned high efficiency continuous class B GaN HEMT |
