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主管单位 中华人民共和国
工业和信息化部
主办单位 哈尔滨工业大学 主编 冷劲松 国际刊号ISSN 0367-6234 国内刊号CN 23-1235/T

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引用本文:翟文杰,翟权.碳化硅超声-电化学机械抛光试验研究[J].哈尔滨工业大学学报,2019,51(1):16-21.DOI:10.11918/j.issn.0367-6234.201809048
ZHAI Wenjie,ZHAI Quan.Experimental study on ultrasonic-electrochemical mechanical polishing of silicon carbide[J].Journal of Harbin Institute of Technology,2019,51(1):16-21.DOI:10.11918/j.issn.0367-6234.201809048
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碳化硅超声-电化学机械抛光试验研究
翟文杰,翟权
(哈尔滨工业大学 机电工程学院,哈尔滨 150001)
摘要:
为探究超硬脆碳化硅(SiC)材料的高效研抛方法,分别应用铸铁抛光盘、聚氨酯抛光盘、半固结磨粒抛光盘在自来水、KOH溶液、芬顿反应液3种研抛液中通过控制变量法对SiC进行了超声-电化学机械研抛试验,得到以试件材料去除率和表面质量为评价指标的优化抛光工艺参数. 试验结果表明:使用铸铁抛光盘时材料去除率高,但表面质量差;使用半固结磨粒抛光盘时表面质量最好,但材料去除率低;芬顿反应液对提高试件的材料去除率效果最好; 在试件与抛光盘之间的电压为+10 V时,试件的材料去除率最高,比无电压时提高了55.1%; 当试件保持环施加超声振动后,比无超声时材料去除率提高了91.7%,可见超声振动对SiC试件抛光起主要作用.
关键词:  碳化硅  超声  电场  机械抛光  材料去除率  表面粗糙度
DOI:10.11918/j.issn.0367-6234.201809048
分类号:TG356.28
文献标识码:A
基金项目:国家自然科学基金(51475119)
Experimental study on ultrasonic-electrochemical mechanical polishing of silicon carbide
ZHAI Wenjie,ZHAI Quan
(School of Mechatronic Engineering, Harbin Institute of Technology, Harbin 150001, China )
Abstract:
To explore an efficient polishing method for ultra-hard brittle silicon carbide materials, an ultrasonic-electrochemical mechanical polishing experiment was performed on the SiC specimens by controlling variable method. The SiC specimens were polished by cast iron polishing plate, polyurethane polishing plate and semi-fixed abrasive polishing plate in three kinds of polishing liquids, i.e. tap water, KOH solution and Fenton reaction solution respectively, and the optimized polishing process parameters based on the material removal rate and surface quality of SiC specimen were obtained. The results show that the material removal rate is high when using cast iron polishing plate, but the surface quality is poor. The surface quality is best when using semi-fixed abrasive polishing plate, but the material removal rate is low. The Fenton solution has the best effect on improving the material removal rate. When the voltage between specimen and polishing plate is +10 V, the material removal rate is the highest, which is raised by 55.1% than that without voltage. When the ultrasonic vibration of the specimen retaining ring was applied, the material removal rate was increased by 91.7% compared with that of non-ultrasound. The ultrasonic vibration plays a major role in the polishing of SiC specimen.
Key words:  silicon carbide  ultrasonic  electric field  mechanical polishing  material removal rate  surface roughness

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