| 引用本文: | 尹振,徐杨,李俊龙,孟莹,赵雪龙,须贺唯知,王英辉.Pt催化甲酸气氛下的碳化硅低温键合[J].哈尔滨工业大学学报,2022,54(12):103.DOI:10.11918/202102036 |
| YIN Zhen,XU Yang,LI Junlong,MENG Ying,ZHAO Xuelong,SUGA Tadatomo,WANG Yinghui.SiC low-temperature bonding in Pt catalyzed formic acid atmosphere[J].Journal of Harbin Institute of Technology,2022,54(12):103.DOI:10.11918/202102036 |
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| Pt催化甲酸气氛下的碳化硅低温键合 |
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尹振，徐杨，李俊龙，孟莹，赵雪龙，须贺唯知，王英辉
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1.中国科学院微电子研究所, 北京 100029;2.中国科学院大学 电子电气与通信工程学院, 北京 100049;3.昆山微电子技术研究院, 江苏 苏州 215347;4.明星大学 合作研究中心, 东京 191-8506
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| 摘要: |
| 为实现碳化硅(SiC)在300 ℃以下的低温键合, 研究了以Cu和Au作为键合中间层, 利用Pt催化甲酸气氛预处理金属膜表面并为键合提供还原性保护气氛的低温键合方法。首先, 研究了带有Cu金属层的SiC晶片在氮气、甲酸气氛以及Pt催化甲酸气氛下的键合过程, 通过对比键合强度来验证Pt催化甲酸气氛下完成带有Cu层的SiC晶片键合的可能性。其次, 采用扫描声学显微镜(SAM)和扫描电子显微镜(SEM)对键合后样品进行表征, 并通过改变键合温度及键合加载的压力, 研究关键工艺参数对于键合强度的影响。最后, 对比了Cu, Au两种中间层金属在不同气氛下的SiC-SiC键合效果。研究结果表明：相比不含甲酸的N2气氛以及未经过Pt催化的甲酸气氛, 经过Pt催化的甲酸气氛能够更好地还原Cu表面的氧化物, 实现带有Cu金属层的SiC-SiC低温键合; SEM、SAM测试表明键合界面无明显空洞, 键合效果良好; 与使用Au层的SiC样品相比, 在低温下基于Cu中间层的SiC样品键合强度显著高于Au中间层的样品, 显示了本方法对还原表面主要为氧化物的金属层键合的优越性。本方法利用Pt催化甲酸气氛预处理Cu表面并为键合提供还原性保护气氛, 在200 ℃时获得了12.5 MPa的剪切强度, 实现了高强度的SiC-SiC低温键合。 |
| 关键词: 碳化硅(SiC) 低温键合 甲酸 催化还原 金属中间层 |
| DOI：10.11918/202102036 |
| 分类号:TN305 |
| 文献标识码:A |
| 基金项目:中国科学院微电子所所长基金(51Y5SF02F001);中国科学院人才项目(29Y6YB02F001);昆山微电子技术研究院自研项目(0202060001, 0202060003) |
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| SiC low-temperature bonding in Pt catalyzed formic acid atmosphere |
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Zhen YIN1,2,3, Yang XU1, Junlong LI1,2,3, Ying MENG1,2,3, Xuelong ZHAO1,2,3, Tadatomo SUGA4, Yinghui WANG1,2
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1.Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;2.School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;3.Institute of Microelectronics Technology of Kunshan, Suzhou 215347, Jiangsu, China;4.Collaborative Research Center, Meisei University, Tokyo 191-8506, Japan
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| Abstract: |
| A method was proposed to realize SiC-SiC bonding at the temperature below 300 ℃. Cu and Au were taken as intermediate layer, and Pt was used to catalyze formic acid atmosphere to pretreat metal surface and provide reducing protective atmosphere for bonding. Firstly, the bonding of SiC samples with Cu layer in N2 atmosphere, formic acid atmosphere, and Pt catalyzed formic acid atmosphere was studied. By comparing the bonding strength, the possibility of SiC-SiC bonding with Cu interlayer in Pt catalyzed formic acid atmosphere was verified. Secondly, the samples were characterized by scanning acoustic microscope (SAM) and scanning electron microscope (SEM). The influence of key process parameters on the bonding strength was studied by changing the bonding temperature and pressure. Finally, the SiC-SiC bonding results of Cu and Au in different atmospheres were compared. Results show that compared with N2 atmosphere and formic acid atmosphere without Pt catalysis, Pt catalyzed formic acid atmosphere reduced the oxides on the surface of Cu effectively and realized SiC-SiC bonding with Cu interlayer at low temperature. SAM and SEM images show that there was no obvious void in the bonding interface. Compared with SiC samples with Au interlayer, the bonding strength of SiC samples with Cu interlayer was significantly higher at low temperature, which indicates the superiority of the proposed method in the metal surfaces with oxidation layer. High-strength SiC-SiC bonding at low temperature was achieved through Pt catalyzed formic acid atmosphere pretreatment and protection. Shear strength of 12.5 MPa at 200 ℃ was obtained, and an effective bonding between SiC and SiC was achieved. |
| Key words: silicon carbide (SiC) low-temperature bonding formic acid catalytic reduction metal interlayer |
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